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Interatomic Potentials Repository - NIST

Citation: T. Kumagai, S. Izumi, S. Hara, and S. Sakai (2007), "Development of bond-order potentials that can reproduce the elastic constants and melting point of silicon for classical molecular dynamics simulation", Computational Materials Science, 39(2)

(PDF) Low-temperature synthesis of silicon carbide …

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica.

Aditi Chattopadhyay — Arizona State University

Year 2 - Scale-Dependent Measurements of Meteorite Strength - Impliions for the Fragmentation of Potentially Hazardous Asteroids Chattopadhyay, A., Garvie, L. & Chawla, N. National Aeronautics Space Administration (NASA) 2/1/19 → 7/31/21 Project:

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Technology - Akash Systems

A Fundamental Advantage in Technology: The Power of Synthetic Diamond At the core of our RF Power Amplifiers (RFPAs) and small satellites (or CubeSats) is a pioneering new invention: Gallium Nitride (GaN)-on-Diamond wafer technology. In 2003, Akash co-founder, Felix Ejeckam (then at Group4 Labs, Inc.), invented the idea of lifting GaN thin films from its … Continue reading "Technology"

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CeraSurf®-p femoral heads and acetabular liners are made from state-of-the-art material and have been in clinical use and successfully implanted since 2011. CoorsTek CeraSurf®-p is a state of the art material used for ceramic bearing surfaces in total hip

Power semiconductor device figure of merit for high-frequency …

This paper provides theoretical guidelines to choose the optimum semiconductor material for high-frequency appliions. It is demonstrated that gallium arsenide, silicon carbide, and semiconducting diamond-based devices offer significant advantages in terms of

‪Weijiang Xue‬ - ‪Google ‬

J Yi, T Wang, Z Xie, W Xue Journal of Alloys and Compounds 581, 452-458, 2013 28 2013 Moderately concentrated electrolyte improves solid–electrolyte interphase and …

OSA | Bright and photostable single-photon emitter in …

Single-photon sources are of paramount importance in quantum communiion, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is

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Dr Peter Gammon

For the past ten years, I have worked on the development of silicon carbide (SiC) power devices. After working on SiC heterojunction devices during my PhD, I held a 5-year Royal Academy of Engineering Research Fellowship developing silicon-on-silicon carbide (Si/SiC) power devices for the harsh environment from 2012-2017.

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CoorsTek has contributed to the development of a new ceramic-based method to convert natural gas to liquids. Golden, Colorado, USA August 5, 2016 — CoorsTek, the world’s leading engineered ceramics manufacturer, today announced that a team of scientists from CoorsTek Merane Sciences, the University of Oslo (Norway), and the Instituto de Tecnología Química (Spain) has developed a new

Glossary - Infineon Technologies

Silicon carbide (SiC) is used for voltages in excess of 300 volts (see Silicon Carbide). SiC Schottky diodes offer a nuer of advantages over conventional diodes in power electronics. When used together with IGBT transistors, it is possible to dramatically reduce switching losses in …

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Wolfspeed, A Cree Company, has spent more than 28 years as part of Cree Inc., building the future by leading the innovation and commercialization of next-generation systems based on silicon carbide and gallium nitride. Wolfspeed’s wide bandgap semiconductor

Power Semiconductors - Littelfuse

Littelfuse Automotive Sensor Products offer a wide range of sensors for use in monitoring various vehicular functions in the areas of passenger safety, comfort and convenience plus vehicle powertrain, chassis and emission appliions. Power Semiconductors IXYS

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S''TUDIES ON SILICON CARBIDE LBwrs S. Rr,uslrr,n, Mineralogical …

S''TUDIES ON SILICON CARBIDE LBwrs S. Rr,uslrr,n, Mineralogical Laboratory, Uniaersi.ty oJ Michigon. Assrnact This paper is divided into four parts. Part I describes a new system for naming the types of SiC based on the symmetry and nuer of layers

1711 Grinding and Abrasive Machining - Google Slides

Grinding and Abrasive Machining Lecture Video 2 Grinding may be more than what you were thinking 3 Abrasive Machining Oldest basic machining process Produces chips similar in form to other processes Abrasive particles may be Free Mounted in resin to a belt or paper Bonded together into wheels or stone Wheels may be mounted onto shafts 4

link.springer

The addition of silicon carbide nanoparticles (SiCNP) may provide a route to improving the fracture toughness for a wide range of thermoelectric materials. This study examines the mechanical properties, including elastic modulus, hardness, and fracture toughness for 0–4 vol% SiCNP incorporated into Mg2Si thermoelectric matrices.

High-Voltage Capacitance Measurement System for SiC Power …

High-Voltage Capacitance Measurement System for SiC Power MOSFETs † Parrish Ralston 1, T. H. Duong 2, Nanying Yang 1, D. W. Berning 2, Colleen Hood 2, A. R. Hefner 2, Kathleen Meehan 1 1 Bradley Department of Electrical and Computer Engineering

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A High-Density, High-Efficiency, Isolated On-Board …

28/8/2013· Abstract: This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high efficiency for appliion in electric vehicles (EVs) and plug-in hybrid EVs (PHEVs). The proposed level 2

Gallium nitride devices for power electronic appliions - …

21/6/2013· The predicted BFOM for silicon carbide of more than 1000 provided strong motivation for development of unipolar devices from the available 6H-SiC polytype material in the 1990s. The first high-voltage (400 V) SiC Schottky rectifier with low (~1 V) on-state voltage drop and excellent reverse recovery characteristics was reported by NCSU in 1992 [ 9 ].

SiC - Silicon Carbide | RichardsonRFPD

Richardson RFPD has an extensive silicon carbide (SiC) offering, including the latest products and design resources focused exclusively on this emerging technology. Browse our selection of Schottky diodes, MOSFETs and IGBTs and eduional material from industry leading manufacturers Wolfspeed, Microsemi, Vincotech and Powerex.