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All Sintered Silicon Carbide products that Silcarb manufactures are isostatically pressed. These are then dried and fired in our state-of-the-art sintering furnaces to temperatures of 2100°C. Some of the key properties of sintered silicon carbide are high hardness (second only to diamonds), low porosity, low density (40% the density of steel), etc.

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Silicon carbide has been used for grinding and as an abrasive material since its discovery. During World War II, silicon carbide was used as a heating element; however, it was difficult to obtain high density sintered silicon carbide bodies.

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The line is expected to be operational by the first half of 2020, with the goal of producing silicon carbide wafer samples using Soitec’s Smart Cut technology in the second half of 2020. "Silicon carbide can enable higher power density and better efficiency semiconductors in electric vehicles," said Berthold Hellenthal, head semiconductor strategy at Audi AG, in a statement issued by Soitec.

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Therefore, ISO 21068, Parts 1 to 3, covers the full range of analysis from pure silicon carbide to oxidic refractory composition with low-content silicon carbide and/or nitrides. Primarily, ISO 21068, Parts 1 to 3, provides methods to distinguish between different carbon bound types like total carbon (Ctotal) and free carbon (C free ) and derives from these two the silicon carbide content.