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This was ascribed to small crystallite sizes and the occurrence of disorder, manifested as broadening and shifts. Selected area electron diffraction data of suitably oriented cobalt alyst grains on silicon carbide supports show non-periodic disorder in the zone axis orientations that contain the common (001) (HCP) and (111) (FCC) reciprocal lattice planes.
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With Silicon Carbide (SiC) Schottky diodes Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient Press-fit pins as auxiliary contacts Thermally optimized ceramic UL recognized, file no. E63532
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could be shown for silicon in the past, where p-and n-type material resulted in Auger electron shifts of about 0.6 eV [1,2]. This eﬀect is even stronger for wide band gap semiconductors. In the case of silicon carbide the Auger position analysis could
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