In 2008, she returned to Linköping University and led a group working on graphene on silicon carbide using different surface science tools. In 2009 she became a docent and subsequently she trained 1 post doc and graduated 1 PhD and 2 diploma students.
Posted: May 22, 2017 Graphene on silicon carbide can store energy (Nanowerk News) By introducing defects into the perfect surface of graphene on silicon carbide, researchers at Linköping University in Sweden have increased the capacity of the material to store electrical charge.
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Epitaxial graphene grown by thermal Si decomposition of Silicon Carbide appears in different morphological variants, depending on the production conditions: the strongly rugged buffer layer, retaining a considerable amount of sp3 hybridized buffer layer, the softly corrugated graphene monolayer and the rather flat quasi free standing monolayer with sparse small pits pinned to localized
Heating silicon carbide (SiC) to high temperatures (> 1100 C) under low pressures (~10 −6 torr) reduces it to graphene.  This process produces epitaxial graphene with dimensions dependent upon the size of the wafer. The polarity of the SiC used for graphene
Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabriion scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. device processing methods.
Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures Budi Astuti 1,2, Masahiro Tanikawa 3, Shaharin Fadzli Abd Rahman 1, Kanji Yasui 3 and Abdul Manaf Hashim 4, * 1 Ibnu Sina Institute for Fundamental Science Studies, Faculty of Electrical
Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on
Abstract: The first results of the bioimpedance technique appliion to thermo-destructive graphene-on-silicon-carbide will be presented as a basis for biosensor appliions as well as the comparison to the CVD-grown graphene.Summary: The method of impedance measurements applied to graphene films expands the range of possibilities of using the material as sensitive biosensors.
Graphene growth on silicon carbide (SiC) by chemical vapor deposition (CVD) coined with hydrogen intercalation allows 4 in. wafers to be covered with quasi-freestanding (QFS) single-layer graphene (1LG) or bilayer graphene (2LG).1−5 This technology 2,6
Graphene films can be grown on an area as large as the SiC wafer. At present wafers up to 6 inch (150 mm) are available commercially. The ability to grow graphene on insulating silicon carbide wafers, which is essential to eliminating the effect of conductivity on
25/6/2015· When paired with a commercial lithium cobalt oxide hode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of …
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Unfortunately the production of graphene layers using SiC has some draw backs. The cost of the silicon carbide wafers, the high temperatures and the vacuum required for synthesis limit the use of this technique in large scale appliions and therefore this 
A decade of research on Epitaxial Graphene In this decade of research on graphene, methods have been developed to grow monolayer and multilayer epitaxial graphene (MEG) on the Si- and C-face of hexagonal silicon carbide with of up to 100 graphene sheets. The
Graphene on silicon carbide can store energy Date: May 23, 2017 Source: Linköping Universitet Summary: By introducing defects into the perfect surface of graphene on silicon carbide, researchers
CONTEXT The 13 th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021) will be held at the Vinci International Convention Centre (Palais des congrès), from October, Sunday 24 th to Thursday 28 th 2021, proudly hosted by the University of Tours. 2021, proudly hosted by the University of Tours.
Importantly, the graphene/silicon carbide interface is only partially stable and is readily passivated by nearly any element, if the element has access to this interface. The team provides this access by poking holes in the graphene with an oxygen plasma, and then they evaporate pure metal powders onto the surface at high temperatures.
Graphene on silicon carbide can store energy “Graphene on silicon carbide can be made in larger areas than other types of graphene. If we can change the properties of the material in a controlled manner, it may be possible to tailor the surface for other functions.
In creating their graphene nanostructures, De Heer and his research team first use conventional microelectronics techniques to etch tiny "steps" – or contours – into a silicon carbide wafer. They then heat the contoured wafer to approximately 1,500 degrees Celsius, which initiates melting that polishes any rough edges left by the etching process.
Under proper growth conditions, this technique results in so-called epitaxial single layer graphene on the surface of silicon carbide (epigraphene). Compared to graphene grown by other methods, epigraphene grows as a single crystal over the entire silicon carbide substrate, anticipating higher electronic quality with respect to polycrystalline graphene grown by other methods.
Using inelastic electron stering in coination with dielectric theory simulations on differently prepared graphene layers on silicon carbide, we demonstrate that the coupling between the 2D plasmon of graphene and the surface optical phonon of the substrate
Among several manufacturing methods, graphene grown on silicon carbide is one of the promising ones for biosensing. A chip design has been developed in order to support research into graphene on silicon carbide as a base material for biosensors.
Ultra-thin graphene layers grow on silicon carbide (SiC) crystals when they are subjected to a high-temperature annealing process. The layers can be patterned using microelectronics lithography methods; however, this process can damage the edges of narrow graphitic structures and negatively impact the functionality of graphitic ribbons.
When silicon carbide is heated to 2000 C, silicon atoms on the surface moves to the vapor phase and only the carbon atoms remain. The graphene does not react easily with its surroundings due to the high quality of the graphene layer and its innate inertness, while appliions often rely on controlled interaction between the material and the surroundings, like gas molecules.
Growing Graphene on Silicon Carbide See all Hide authors and affiliations Science 26 May 2006: Vol. 312, Issue 5777, pp. 1101 DOI: 10.1126/science.312.5777.1101m Article Info & Metrics eLetters PDF
Figure 1: In freestanding graphene, the valence and conduction energy bands, called 𝜋 and 𝜋 ∗ bands, meet at momentum points K and K ′ (left). Conrad and colleagues  have shown that, although the first carbon layer of samples grown epitaxially on a silicon carbide substrate at a temperature of about 1 3 4 0 ∘ C is electronically inert and so does not display a band structure