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Silicon Carbide whiskers have been synthesized using silica sol and activated carbon as reagents via microwave heating without the presence of any of the alysts, such as Fe , Ni , and Al etc.. The synthesized whiskers were separated and concentrated from the as‐synthesized products using the gravity concentration process.
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A thin layer of amorphous silicon carbide (a-SiC) was deposited via plasma-enhanced chemical vapor deposition (PECVD) to insulate the surface of the probe from the external environment. Forming the probes on a SOI wafer supported the ease of probe removal from the handle wafer by simple immersion in HF, thus aiding in the manufacturability of the probes.
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Planned maintenance will take place on the Scitation platform on Friday, June 21, 2019 between the hours of 6pm and 10pm EDT. We apologize for any inconvenience this may cause. Advances in silicon carbide microfabriion and growth process optimization for silicon carbide nanostructures are ushering in new opportunities for microdevices capable of operation in a variety of demanding
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City University of Hong Kong - Cited by 12,461 - materials physics - chemical physics - physics - physical chemistry - chemistry This "Cited by" count includes citations to the following articles in Scholar. The ones marked * may be different from the article in the profile.
Source: Uniroyal Technology Corporation Sarasota, FL. Sterling Semiconductor, Inc. (Sterling), a subsidiary of Uniroyal Technology Corporation (Nasdaq: UTCI), has begun installation of additional silicon carbide (SiC) production equipment that is expected to increase its SiC wafer production by a factor of ten when the build out is completed in 2001.
MOHAMMAD ISMAIL HOSSAIN has been finishing his Ph.D. in Applied Physics from the Hong Kong Polytechnic University, Hong Kong (QS Ranking: 75) with the prestigious Hong Kong Govt. Fellowship (HKPFS) by jointly working with Stanford University
One-dimensional silicon−carbon nanotubes and nanowires of various shapes and structures were synthesized via the reaction of silicon (produced by disproportionation reaction of SiO) with multiwalled carbon nanotubes (as templates) at different temperatures. A new type of multiwalled silicon carbide nanotube (SiCNT), with 3.5−4.5 Å interlayer spacings, was observed in addition to the
Part Ш Characterization of Silicon Carbide Gap States of Highly Photosensitive a-SiC:H By S. Akita, Y. Nakayama, and T. Kawamura (With 5 Figures) 74 X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films By A.S
The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests.
Theoretical absorption spectra of silicon carbide nanocrystals Authors Shi, S Xu, SJ Wang, X Chen, G Keywords Nanostructures Optical properties Silicon carbide Surface and interface states Issue Date 2006 Publisher Elsevier S.A.. The Journal''s web site is
Abstract Silicon carbide provides promising physical properties which urge this wide band gap semiconductor to be reinspected as material for a possible use in highpower, high-speed, high-temperature, and high-radiation resistant devices. W.J. Choyke and Lyle Patrick, in: Silicon Carbide-1979, Proc. of the 3.
Silicon carbide thin films have been deposited by reactive magnetron sputtering in a pure hydrogen plasma at substrate temperatures, Ts, ranging between 100 and 600 °C. The infrared (IR) absorption spectra and the transmission electron microscopy observations reveal an onset of crystallization at Ts as low as 300 °C. The crystalline fraction increases with Ts and reaches a value of about 60%
Oriented silicon carbide nanowires : Synthesis and field emission properties Research output: Journal Publiions and Reviews (RGC: 21, 22, 62) › 21_Publiion in refereed journal Overview 461 Scopus Citations Scopus Metrics
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Silicon carbide (SiC) is one of the most important third‐generation semiconductor materials. However, the chemical robustness of SiC makes it very difficult to process, and only very limited methods are available to fabrie nanostructures on SiC. In this work, a
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